发明名称 |
Method for forming a DRAM capacitor |
摘要 |
A method for manufacturing a metal-insulator-metal capacitor on a substrate is disclosed. The method comprises the steps of: forming a first dielectric layer onto said substrate; patterning and etching said first dielectric layer to form a contact opening; forming a first metal layer onto said first dielectric layer and into said contact opening; forming a barrier layer onto said first metal layer; forming a second dielectric layer onto said barrier layer; forming a discrete HSG layer onto said second dielectric layer; etching said second dielectric layer by using said HSG layer as a mask; stripping said HSG layer; etching said barrier layer and said first metal layer by using a remaining portion of said second dielectric layer as a mask; stripping said remaining portion of said second dielectric layer; patterning and etching a remaining portion of said barrier layer and a remaining portion of said first metal layer; forming a third dielectric layer over said barrier layer, said first metal layer and said first dielectric layer; and forming a second metal layer over said third dielectric layer.
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申请公布号 |
US6074913(A) |
申请公布日期 |
2000.06.13 |
申请号 |
US19980108901 |
申请日期 |
1998.07.01 |
申请人 |
WORLDWIDE SEMICONDUCTOR MANUFACTURING CORPORATION |
发明人 |
LOU, CHINE-GIE;TU, YEUR-LUEN |
分类号 |
H01L21/02;H01L21/285;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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