| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by Czochralski method comprising setting the in-oven atmosphere gas flow in a pulling machine at a specified level or lower in melting a stock to suppress heat release out of the system and shorten the time of melting the stock so as to improve the productivity of the aimed large-diameter, heavyweight single crystal rod and attain reduction in the production cost. SOLUTION: This method for producing a silicon single crystal through growing a single crystal bar by Czochralski method comprises the following practice: in melting a stock, the in-oven atmosphere gas flow in a pulling machine is set at <=100 L/min, pref. <=0.23 time the opening diameter (mm) of the crucible; from the viewpoint of production apparatus, the flow of the in-oven gas is divided into at least two, one of them, corresponding to 10-50% of the total flow, is allowed to flow via the top of a pull chamber holding a single crystal to be pulled from the melt crucible so as to come into direct contact with the stock in the quartz crucible, while the other, corresponding to 90-50% of the total flow, is allowed to flow via the top of the main chamber so as to be spread throughout the main chamber; wherein an exhaust port is formed on the lower part of the main chamber.
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