Method and structure for isolating semiconductor devices after transistor formation
摘要
A method for isolating semiconductor devices comprising providing a semiconductor substrate. The semiconductor substrate includes a first pair of source/drain regions on either side of a first channel region and a second pair of source/drain regions on either side of a second channel region. One of the first pair of source/drain regions is proximal to one of the second pair of source/drain regions. First and second laterally displaced MOS transistors are formed partially within the semiconductor substrate. An isolation trench is formed through the proximal source/drain regions and the trench is filled with a trench dielectric material such that the proximal source/drain regions are electrically isolated whereby the first transistor is electrically isolated from the second transistor.
申请公布号
US6074904(A)
申请公布日期
2000.06.13
申请号
US19980063796
申请日期
1998.04.21
申请人
ADVANCED MICRO DEVICES, INC.
发明人
SPIKES, JR., THOMAS E.;MICHAEL, MARK W.;GARDNER, MARK I.;DAWSON, ROBERT