发明名称 Caro's cleaning of SOG control wafer residue
摘要 A new method of recycling a spin-on-glass control wafer by removing spin-on-glass residue from the control wafer surface is described. A silicon control wafer is provided having a spin-on-glass layer coated thereon. The spin-on-glass layer is removed using a hydrofluoric acid dip wherein a silk-like spin-on-glass residue 15 remains on the silicon control wafer surface. The silicon control wafer surface is cleaned with a Caro's dip whereby the spin-on-glass residue is removed. Thereafter, the silicon control wafer can be reused.
申请公布号 US6074961(A) 申请公布日期 2000.06.13
申请号 US19980099143 申请日期 1998.06.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 CHANG, JIEH-TING;LIN, SHIOW-SHIANG
分类号 C11D3/39;C11D7/08;C11D11/00;H01L21/306;H01L21/314;(IPC1-7):H01L21/302;B08B3/14 主分类号 C11D3/39
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