发明名称 |
Caro's cleaning of SOG control wafer residue |
摘要 |
A new method of recycling a spin-on-glass control wafer by removing spin-on-glass residue from the control wafer surface is described. A silicon control wafer is provided having a spin-on-glass layer coated thereon. The spin-on-glass layer is removed using a hydrofluoric acid dip wherein a silk-like spin-on-glass residue 15 remains on the silicon control wafer surface. The silicon control wafer surface is cleaned with a Caro's dip whereby the spin-on-glass residue is removed. Thereafter, the silicon control wafer can be reused.
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申请公布号 |
US6074961(A) |
申请公布日期 |
2000.06.13 |
申请号 |
US19980099143 |
申请日期 |
1998.06.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHANG, JIEH-TING;LIN, SHIOW-SHIANG |
分类号 |
C11D3/39;C11D7/08;C11D11/00;H01L21/306;H01L21/314;(IPC1-7):H01L21/302;B08B3/14 |
主分类号 |
C11D3/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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