| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for forming a functional deposition film and a device for forming the film capable of reducing discharge leakage and sparks even in high speed transport and capable of stabilizing discharge, e.g. a method and a device for forming an amorphous silicon film excellent in electrical and optical properties and capable of improving the yield of the element at the time of mass production even when the forming rate is controlled to >= severalÅ/s. SOLUTION: In a deposition film forming method or device, a vacuum-airtight reaction chamber 101 is provided in its inside with a film forming chamber 109 whose one side is composed of a band-shaped member, a reaction gas is introduced into the film forming chamber, the inside of the film forming chamber 109 is exhaused by an exhausting means to control the pressure therein to a desired level, high-frequency electric power is introduced into the film forming chamber to generate plasma, and the band-shaped member is transported to form a deposition film thereon. The upper part of the band-shaped member composing one side of the film forming chamber is covered with an electrically conductive top board 108, the face of the top board facing the film forming chamber 109 is brought into linear or facial contact with the rear side of the deposition film forming face of the band-shaped member, and, with the electric potential of the top board as the earth potential, the deposition film is formed.
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