| 摘要 |
PROBLEM TO BE SOLVED: To reproducibly form an antiferromagnetic film capable of stably yielding sufficient exchange coupling force at room temp. and high temp. by using a sputtering target capable of stabilizing the film compsn. and film quality of an antiferromagnetic film at the time of forming an antiferromagnetic Mn alloy film excellent in corrosion resistance and thermal characteristics by a sputtering method. SOLUTION: This invention relates to a sputtering target substantially consisting of at least one R element selected from the good of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W and Re and Mn, and, the content of oxygen in the target is controlled to <=1 wt/% (including zero). The antiferromagnetic film 3 is obtd. by executing sputter film formation using such sputtering target, and is used, e.g. as an exchange coupling film 2 by laminating with a ferromagnetic film 4, and such exchange coupling film 2 is used for a magneto-resistance effect element or the like. |
