| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride substrate, capable of producing the substrate holding prescribed dielectric strength characteristics by forming a plurality of holes or pores and/or grooves in at least a part of a large aluminum nitride substrate by a laser processing method, heating the substrate at a specific temperature and then cutting the places to which the laser processing method is applied. SOLUTION: This method for producing an aluminum nitride substrate comprises forming a plurality of holes or bores and/or grooves in at least a part of a large aluminum nitride substrate containing a sintering auxiliary such as yttrium by a laser processing method, thermally treating the substrate at a temperature of 1,000-1,800 deg.C to eliminate metal aluminum formed by the laser processing, and then cutting the substrate at the places to which the laser processing method was applied, thereby producing the aluminum nitride substrate having a prescribed size. When the metal aluminum formed by the application of the laser processing is thermally treated, the metal aluminum is changed to the oxide, nitride, etc., of the aluminum to form a resolidified layer and not to form a new conductive layer. Thereby, the aluminum nitride substrate having excellent dielectric strength characteristics can be obtained. |
