发明名称 ALUMINUM NITRIDE-BASED SUBSTRATE AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To obtain the subject substrate with a dense metallized layer of high bond strength to an insulation substrate by simultaneously burning the electrical insulation substrate and the metallized layer at a temperature of as low as <=1,700 deg.C. SOLUTION: This substrate is such one that at least the surface of an insulation substrate 1 consisting of aluminum nitride sintered compact is provided with a metallized layer 2; wherein the metallized layer 2 is such one that tungsten and/or molybdenum is (are) the main metal component(s) and group VIII element(s), alkaline earth element(s), and aluminum are included, on an oxide basis, at 0.1-2 pts.wt., 0.01-0.1 pt.wt., and 3-10 pts.wt., respectively, based on 100 pts.wt. of the main metal component(s), and aluminum nitride is not substantially included; furthermore, a high-concentration alkaline earth metal layer is provided at the interface between the insulation substrate 1 and the metallized layer 2, besides, a cover 6 for airtightly sealing an electric element 5 via the metallized layer 2 is bonded with a brazing material 7 to the insulation substrate 1, thereby affording the electric element 5 with high bond strength, low resistance and high airtightness.
申请公布号 JP2000159588(A) 申请公布日期 2000.06.13
申请号 JP19980336362 申请日期 1998.11.26
申请人 KYOCERA CORP 发明人 HASEGAWA TOMOHIDE;YAMADA SHIGEKI
分类号 H01L23/15;C04B41/51;(IPC1-7):C04B41/88;H01L23/02;H01L23/08;H05K1/09 主分类号 H01L23/15
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