发明名称 |
Process and device for measuring the oxygen potential in a silicon melt |
摘要 |
A process for measuring the oxygen potential in a silicon melt uses an electrochemical potential probe which dips into the melt. The probe voltage is measured using this potential probe which is made of an SiO2 glass tube in which graphite is in direct contact with SiO2 glass. The graphite has a wire making contact with it at the graphite upper end. The probe is dipped into the silicon melt only to an extent such that the graphite/wire contact point contained in the SiO2 glass tube lies above the silicon melt.
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申请公布号 |
US6074547(A) |
申请公布日期 |
2000.06.13 |
申请号 |
US19980134850 |
申请日期 |
1998.08.14 |
申请人 |
WACKER SILTRONIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN AG |
发明人 |
MUELLER, GEORG;SEIDL, ALBRECHT |
分类号 |
G01N27/406;G01N27/36;G01N27/411;G01N27/416;(IPC1-7):G01N27/407 |
主分类号 |
G01N27/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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