Method of forming a semiconductor device comprising a dummy polysilicon gate electrode short-circuited to a dummy element region in a substrate

摘要

The present invention relates to a semiconductor device wherein a dummy gate electrode is fixed to the same electric potential as that of a substrate, the stable operation of an LSI is maintained and the process margin is large, and also to a producing method of the semiconductor device, and the semiconductor device comprises a P-type silicon substrate, a dummy element region unnecessary for the actual LSI operation, which is formed on the P-type silicon substrate, and a dummy gate electrode unnecessary for the actual LSI operation, which is formed on at least a part of the dummy element region through a dummy oxide film, wherein by selectively forming titanium silicide on at least a part of a surface of the dummy element region and the dummy gate electrode, a P+-diffusion layer and a P+-dummy gate electrode of the dummy element region are short-circuited by titanium silicide.