Method of forming an ultrathin gate dielectric

摘要

A method is provided for fabricating a transistor, the method including forming a semiconducting layer above a substrate layer, forming a first dielectric layer above the semiconducting layer and forming a sacrificial layer above the first dielectric layer. The method also includes forming an opening in the sacrificial layer, the first dielectric layer and the semiconducting layer to expose a channel region in the substrate layer. The method further includes forming a gate dielectric above the channel region in the substrate layer within the opening and forming a gate conductor above the gate dielectric within the opening. Moreover, the method includes removing the sacrificial layer to expose sides of the gate conductor and introducing a dopant into the semiconducting layer to form doped source/drain regions. In addition, the method includes forming dielectric spacers adjacent the gate conductor.