COMPOUND SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC DEVICES

摘要

A compound semiconductor device is provided that includes a substrate and an active region disposed above the substrate. The active region includes at least two different pseudomorphic layers, the first layer having the form InxGa1-xPyAszSb1-y-z, and the second layer having the form InqGa1-qPrAssSb1-r-s. The first layer includes at least In, Ga, and As, and the second layer includes at least Ga, As, and Sb. It is preferable for the substrate to be GaAs or AlpGa1-pAs (0 < p < 1), or to have a lattice constant close to or equal to that of GaAs. For the first layer, it is preferable if x is between 0.05 and 0.7, y is between 0 and 0,35, z is between 0.45 and 1, and 1-y-z is between 0 and 0.25. For the second layer, it is preferable if q is between 0 and 0.25 and 1-r-s is between 0.25 and 1.