Voltage pump circuit, especially for semiconductor memory components e.g. DRAM, outputs first high voltage from first voltage pump unit if second high voltage from second voltage pump is present

摘要

The circuit has a pulse generator (101) for generating a pulse signal depending on an externally entered control signal, and first and second voltage pump units (111,121) for generating the same high voltage depending on the control signal and the pulse signal. A voltage transmission unit (131) receives the first high voltage and outputs it if the second high voltage is present.