发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A NON-VOLATILE MEMORY WHICH IS ERASABLE BY MEANS OF UV IRRADIATION |
摘要 |
The invention proposes a simple method to lower the threshold voltage of UV erased EPROM and OTP memories. During the erasure, a voltage is applied to the control gate (10) or wordline (2) which is on-chip generated as a photovoltage by means of photodiode (12) irradiated by radiation (15) during erasure. Because the wordlines are coupled to further zones forming photosensitive pn-junctions in the semiconductor body, measures are taken to prevent that, due to charge transport across said junctions, the generated photovoltage is decreased too strongly.
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申请公布号 |
WO0033317(A1) |
申请公布日期 |
2000.06.08 |
申请号 |
WO1999EP08947 |
申请日期 |
1999.11.18 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
WIDDERSHOVEN, FRANCISCUS, P. |
分类号 |
H01L21/8247;G11C16/18;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/18 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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