| 摘要 |
<p>The present invention removes unwanted deposited material (22) from a substrate backside (14) by chemically etching the material, while substantially preventing dissolution of the material from the substrate front side (12). Preferably, the etching process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material also from the substrate edge. The associated apparatus employs a rotating pedestal with a plurality of clamps (379) for holding a semiconductor wafer (38) or the like, and a plurality of nozzles (40, 50) for spraying rinsing and etching fluid.</p> |
