| 发明名称 |
METHOD OF FABRICATION OF A FERRO-ELECTRIC CAPACITOR AND METHOD OF GROWING A PZT LAYER ON A SUBSTRATE |
| 摘要 |
The present invention is related to a method, wherein a PZT layer (35) comprises a first PZT sub-layer and a second PZT sub-layer, the Ti-concentration of the first PZT sub-layer being higher than the Ti-concentration of the second PZT sub-layer.
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| 申请公布号 |
WO0033361(A1) |
申请公布日期 |
2000.06.08 |
| 申请号 |
WO1999BE00155 |
申请日期 |
1999.11.30 |
| 申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM;WOUTERS, DIRK;NORGA, GERD |
发明人 |
NORGA, GERD |
| 分类号 |
H01G4/12;H01G4/33;H01L21/02;H01L21/314;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;(IPC1-7):H01L21/02 |
主分类号 |
H01G4/12 |
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