| 摘要 |
<p>An object of the present invention is to provide a quartz glass jig free from microcracks in the oxide film formed by a CVD process and the like even after rinsing for a plurality of times and which enables semiconductor products free from contamination due to the generation of particles. Another object of the present invention is to provide a production method thereof. The object above is accomplished by a quartz glass jig having large irregularities on the surface thereof, characterized in that said irregularities have a center line roughness Ra in the range of from 2 to 30 νm, a maximum height Rmax in the range of from 10 to 150νm, and a width in the range of from 10 to 500 νm, and by a method which comprises forming an inorganic thin film on the surface of a quartz glass jig free from microcracks and having fine irregularities on the surface thereof, and thereafter rinsing it a plurality of times.</p> |
