METHOD OF FORMING INORGANIC COMPOUND SOLID AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE EMPLOYING THE SAME

摘要

A method for producing an excellent inorganic compound solid substance (such as ferroelectric film) by heat treatment at a relatively low temperature by using an organic compound material containing a metallic element. To form a ferroelectric film, a solution of an organic compound material containing a metallic element is applied to a semiconductor substrate (S41), the substrat e is dried (S42) and preliminarily baked (S43), the steps are repeated until t he thickness of the film formed on the substrate reaches a predetermined value, organic substances are removed by, for example, a heat treatment (at about 550~C) in a low-pressure atmosphere (at about 50 Torr) (S45), the inorganic compound material obtained by the organic substance removal is baked at, for example, about 550~C to crystallize the organic compound material (S46).