| 摘要 |
A ferroelectric memory device includes a first interlayer film. This first interlayer film has a first contact hole in which a plug is buried by W-CVD. Thereafter, a ferroelectric capacitor, a second interlayer film, etc. are formed on the first interlayer film so that a second contact hole can be formed on the second interlayer film. A second contact hole is formed through the second interlayer film. This second contact hole is filled with a metal interconnection for connection to the plug. <IMAGE> |
