| 摘要 |
<p>A semiconductor memory device which comprises a first protective insulation film 3 covering the whole surface of a semiconductor substrate having a transistor composed of a source region, a drain region and a gate integrated thereon, a capacitative element for data storage composed of a lower electrode 4, a capacitative film 5 of an insulating metal oxide and an upper electrode 6 formed on the first protective insulation film 3, a second protective insulation film 7 covering the whole surface of first protective insulation film 3 and the capacitative elements, a hydrogen barrier layer 10, 11 formed to cover the whole surfaces of contact holes 8, 9 formed through the second protective insulation film 7 penetrating respectively to the upper electrode 6 and the lower electrode 4 and the exposed surfaces of upper electrode 6 and lower electrode 4, a contact hole 12 formed through the first protective insulation film 3 and the second protective insulation film 7 penetrating to the transistor, and an interconnection layer 13 which electrically connects the capacitative element and the transistor. In the memory device, the catalytic reaction against hydrogen, which takes place at the surfaces of upper electrode and the lower electrode during resist removal with oxygen plasma, can be suppressed. Thus, a semiconductor memory device containing capacitative elements of high reliability is presented. <IMAGE></p> |
