发明名称 |
Method and apparatus for fabricating single crystal |
摘要 |
This invention relates to fabrication of a single crystal of a compound semiconductor according to the vertical Bridgman method which improves a recess in the interface between solid and melt and can obtain a stable yield of single crystal growth characterized in that a part for discharging the heat of a crucible to the outside in the radial direction is formed at least in a part in the circumferential direction of a heater part for controlling the interface between solid and melt in a heater which surrounds the crucible and a semiconductor melt is gradually solidified from a lower part to an upper part in the crucible while maintaining the interface between solid and melt in a saddle shape, thereby growing a single crystal. |
申请公布号 |
GB2338909(B) |
申请公布日期 |
2000.06.07 |
申请号 |
GB19990012194 |
申请日期 |
1999.05.25 |
申请人 |
* HITACHI CABLE LTD. |
发明人 |
SEIJI * MIZUNIWA;KENYA * ITANI;MICHINORI * WACHI |
分类号 |
C30B11/00;C30B29/42;H01L21/208 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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