Gas supplying apparatus and vapor-phase growth plant

摘要

A vapor-phase growth plant which has a dopant gas supplying apparatus comprising a plurality of dopant gas supplying containers, and a multiple stage gas flow subsystem with a plurality of dopant gas supply conduits therein, of which said dopant gas supply conduits form a tournament-style network with a plurality of confluences on which the dopant gas supply conduits are united and the gas flows therein are merged for subjection to even mixing which results in gradual decreasing of the number of the dopant gas supply conduits as the dopant gas flows proceed in the multiple stage gas flow subsystem. Together with the equipped pressure reducing valves, the dopant gas which is highly evened in its pressure and its concentration can be supplied to the vapor-phase growth apparatus, thereby affording stable production of vapor-phase growth products with extremely lessened quality variance. The dopant gas supplying apparatus described compiles the gas supply conduits within it to two groups, each of which can be used alternatively by switching of these. Therefore, the apparatus can supply dopant gas continuously and for a longer period. Also the operation of the dopant gas supplying apparatus can be simplified.