| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thinner semiconductor integrated device which is high in productivity, low in cost, high in degree of freedom of chip design, capable of coping with a high-speed operation, and smaller in thickness than usual. SOLUTION: This semiconductor integrated device is equipped with a first semiconductor chip 10 whose element forming surface is fixed on the underside of a lead frame through a lead-on-chip, a second semiconductor chip 11 whose non-element forming surface is fixed to the top surface of a die pad 12 through an adhesive layer 16 without making its element forming surface or non-element forming surface confront that the first semiconductor chip 10, metal wires 17 and 18 which electrically connect the first semiconductor chip 10 and inter leads 13, and the second semiconductor chip 11 and inner leads 13 together respectively, and a sealing resin 19 which seals up the lead frame, semiconductor chips 10 and 11, and the metal wires 17 and 18. |
