发明名称 |
Radiation-hardening of microelectronic devices by ion implantation into the oxide and annealing |
摘要 |
The radiation hardness of a microelectronic device is improved by implanting dopant ions, such as Si, into an oxide layer. This implantation creates electron traps/recombination centers in the oxide layer. A subsequent anneal remove defects in the active silicon layer.
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申请公布号 |
US6071791(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19980133839 |
申请日期 |
1998.08.13 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
HUGHES, HAROLD;MCMARR, PATRICK |
分类号 |
H01L21/265;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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