| 摘要 |
PROBLEM TO BE SOLVED: To increase the quantity of charges being handled by an element while sustaining the bias voltage at an infrared detecting section at a low level by arranging a charge storing section having high capacitance above the infrared detecting section thereby increasing aperture rate of the element. SOLUTION: Signal charges converted at an infrared detecting section 3 is transferred to a charge storing section 23 under control of a bias control section 20. The signal charges stored at the charge storing section 23 is transferred at a specified timing to a read-out circuit section 10 under control of a transfer gate 12. Since the charge storing section 23 is disposed above the infrared detecting section 3, the ratio of the area of the infrared detecting section 3 to the pixel area is not lowered in an infrared solid state image sensor 40. Consequently, infrared ray detecting effect of the element is prevented from lowering by forming the charge storing section 23. Furthermore, the fabrication process does not require an intricate step because the charge storing section 23 has a structure of parallel plate capacitor and the capacitance can be regulated easily.
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