发明名称 Sputtering apparatus simulation method
摘要 Calculation is made of a collision point and a collision time of collision between a sputter particle and a surrounding gas particle (step 102). The collision time is compared with a unit time having a predetermined length (step 104). When the collision time is smaller than the unit time, calculation is made of the temperature distribution of a surrounding gas at the collision point with reference to a result of thermal analysis performed in a preceding unit time (step 105). Then, the energy variation of the surrounding gas particle is calculated by the use of the temperature distribution (steps 106-109). After the calculation is performed for all collision coordinates within the unit time, the temperature distribution of the surrounding gas at the collision point. is obtained by thermal analysis with reference to the result of calculation of the energy variation and the unit time is renewed (steps 111-113).
申请公布号 US6070735(A) 申请公布日期 2000.06.06
申请号 US19980201143 申请日期 1998.11.30
申请人 NEC CORPORATION 发明人 OHTA, TOSHIYUKI
分类号 C23C14/34;G06F19/00;G06Q50/00;G06Q50/04;H01J37/34;H01L21/00;H01L21/203;(IPC1-7):C23C14/34 主分类号 C23C14/34
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