发明名称 SEMICONDUCTOR DARK IMAGE POSITION DETECTING ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To quickly and easily detect a dark image position such as a dark gauge mark existing in a bright background by arranging a resistor located in response to a photoelectric layer for supplying a lack of photoelectric current. SOLUTION: With respect to photoelectric current generated in a photoelectric layer S in compliance with incident light and let flow into a resistor layer Rp in response to the light incident position, the lack of the photoelectric current is supplied so that distribution of the current flowing through the resistor layer Rp is unified. That is, in each resistor Rd constituting a split resistor, current complementing the lack of photoelectric current is supplied from the resistor Rd matching the light incident position on the photoelectric layer S. The complimenting current is distributed according to the resistor Rd part matching the inflow position of the photoelectric current to the resistor layer Rp and a resistant value between signal current output terminals A, B so as to be detected as a signal current from the output terminals A, B. The signal current is computed for calculating a gravity center position of the dark point image.</p>
申请公布号 JP2000155014(A) 申请公布日期 2000.06.06
申请号 JP19980330362 申请日期 1998.11.20
申请人 INST OF PHYSICAL & CHEMICAL RES 发明人 IDESAWA MASANORI;FUJITA TOYOMI;YANO YASUSHIGE
分类号 G01B11/00;H01L31/02;H01L31/10;H01L31/16;(IPC1-7):G01B11/00 主分类号 G01B11/00
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