| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device which can be stabilized in element characteristics surely fixing a substrate at a certain potential. SOLUTION: A P-type well layer 2 is formed on a P-type silicon substrate 1, and a gate finger-type N-channel transistor 3 is formed on the P-type well layer 2. A substrate potential fixing P+ layer 10 is formed inside the silicon substrate extending from an active region to the end of a field oxide film 9. A contact hole 12 is bored in the source region 7 of a transistor 3 so as to reach the inside of the substrate potential fixing P+ layer 10 penetrating through the source region 7, so that both the source region 7 and the P+ layer 10 are fixed at a certain potential by the contact hole 12. |
