| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method for preventing a deterioration in interlayer breakdown strength in a wiring structure, and realizing a minute pattern of the wiring structure while the performance is not decreased even though an etching apparatus in a conventional SAC process in a semiconductor manufacturing process is used. SOLUTION: In a dry etching method, an etching gas is fed to a reactive chamber and the etching is carried out by making the etching gas in a plasma state. As for the etching gas, an additive gas of NOx is added to a main gas containing C and F to use a mixed etching gas. When the interlayer film 7 is etched in a SAC manufacturing step, a selective ratio with a stopper of Si3M4 film 6 can be increased, and when a wiring layer 10 is formed, interlayer breakdown strength with a gate electrode 3 can be made sufficiently well.
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