发明名称 METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide the method which enables improvement in yield of single crystal growth by preventing any damage to a seed crystal from being caused through reaction of a raw material before the crystal synthesis with the seed crystal and also to provide the device for the method. SOLUTION: This device is provided with a first vessel 8 for receiving a seed crystal 9 and growing a single crystal, a heating means 12 placed so as to encircle the first vessel 8; and a second vessel 3 that is placed above the first vessel 8 and has an opening 6 at the bottom and is used for receiving a raw material 4 for single crystal growth wherein the second vessel 3 is attachable and detachable and includes a sealing means 7 for sealing the opening 6.
申请公布号 JP2000154088(A) 申请公布日期 2000.06.06
申请号 JP19980323851 申请日期 1998.11.13
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SAWADA SHINICHI
分类号 C30B11/00;C30B29/40;C30B29/48;(IPC1-7):C30B11/00 主分类号 C30B11/00
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