发明名称 |
METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide the method which enables improvement in yield of single crystal growth by preventing any damage to a seed crystal from being caused through reaction of a raw material before the crystal synthesis with the seed crystal and also to provide the device for the method. SOLUTION: This device is provided with a first vessel 8 for receiving a seed crystal 9 and growing a single crystal, a heating means 12 placed so as to encircle the first vessel 8; and a second vessel 3 that is placed above the first vessel 8 and has an opening 6 at the bottom and is used for receiving a raw material 4 for single crystal growth wherein the second vessel 3 is attachable and detachable and includes a sealing means 7 for sealing the opening 6.
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申请公布号 |
JP2000154088(A) |
申请公布日期 |
2000.06.06 |
申请号 |
JP19980323851 |
申请日期 |
1998.11.13 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SAWADA SHINICHI |
分类号 |
C30B11/00;C30B29/40;C30B29/48;(IPC1-7):C30B11/00 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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