SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To raise the integration degree of elements without causing the degradation of the performance of a MOS field-effect transistor. SOLUTION: This manufacturing method is a method for manufacturing a MISFET(Metal Insulator Semiconductor Field-Effect Transistor) of a structure, wherein in the case where impurities for short-channel effect inhibition are doped in a semiconductor substrate 1 obliquely to the main surface of the substrate 1, gate electrodes 3 and 3 adjacent to each other are arranged so that the impurities, which are doped in the substrate 1 from the direction intersecting the electrodes 3, are not doped between the electrodes 3 and 3 and the electrodes 3 and 3 are arranged so that a source region of the MISFET is arranged between the electrodes 3 and 3.