| 摘要 |
PROBLEM TO BE SOLVED: To provide an excellent method for forming a Cu wiring, which can easily obtain the low-cost and highly reliable Cu wiring usable for a semiconductor integrated circuit by an electroplating method. SOLUTION: A method for forming a Cu wiring by an electroplating method comprises a process for forming a silicon nitride(SiN) film which is an insulating film, a tungsten (W) film which is a conductive film, a titanium nitride(TiN) film or the like on a plated feeding layer 3, and a Cu film as a covering layer 7 by a CVD method or a sputtering method, before a process for removing the layer 3 and a process for removing simultaneously the layers 7 and 3 using an etchback method.
|
