发明名称 Process for depositing titanium nitride films
摘要 The present invention provides an efficient process for depositing a titanium nitride film on a substrate. The process comprises the steps of heating the substrate and subsequently exposing the heated substrate to a first gas containing tetrakis(dimethylamido)titanium and to a second gas containing tetrakis(diethylamido)titanium.
申请公布号 US6071562(A) 申请公布日期 2000.06.06
申请号 US19980074298 申请日期 1998.05.07
申请人 LSI LOGIC CORPORATION 发明人 HORNBACK, VERNE;ALLMAN, DERRYL
分类号 C23C16/34;(IPC1-7):C23C16/34 主分类号 C23C16/34
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