发明名称 |
Process for depositing titanium nitride films |
摘要 |
The present invention provides an efficient process for depositing a titanium nitride film on a substrate. The process comprises the steps of heating the substrate and subsequently exposing the heated substrate to a first gas containing tetrakis(dimethylamido)titanium and to a second gas containing tetrakis(diethylamido)titanium.
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申请公布号 |
US6071562(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19980074298 |
申请日期 |
1998.05.07 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
HORNBACK, VERNE;ALLMAN, DERRYL |
分类号 |
C23C16/34;(IPC1-7):C23C16/34 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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