| 发明名称 |
Insulated gate bipolar transistor |
| 摘要 |
A insulated gate bipolar transistor comprising a semiconductor substrate layer having an impurity concentration of not less than 4.0x1013/cm3, and being substantially free of lifetime killers.
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| 申请公布号 |
US6072199(A) |
申请公布日期 |
2000.06.06 |
| 申请号 |
US19930151055 |
申请日期 |
1993.11.12 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
IWAMURO, NORIYUKI |
| 分类号 |
H01L29/68;H01L21/331;H01L29/10;H01L29/36;H01L29/739;H01L29/78;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/68 |
| 代理机构 |
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代理人 |
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| 主权项 |
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