| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device by which films having formality in quality and thickness can be formed on a large-area substrate such as a substrate for liquid crystal display panel. SOLUTION: This device comprises a load lock chamber 1 internally kept in vacuum state, a plasma chamber 2 and a process chamber 3. An outlet 4 is provided in the load lock chamber 1, and a heater 5 for heating a substrate 13, a state 6 for transporting the substrate 13, and an outlet 7 are provided in the process chamber 3. A window 8 made of silica glass for introducing high-frequency power to generate plasma, a resonator 9 for combining the high-frequency power with the plasma, an inlet 10 for introducing gas for generating plasma, and an inlet 11 for introducing process gas are provided in the plasma chamber 12. Moreover, a plate 12 having a hole of mesh or slit-shape is provided in the plasma chamber 2. The plate 12 is detachable, and the shape of an opening, and an opening degree or thickness of the plate 12 can be changed. |
