| 摘要 |
PROBLEM TO BE SOLVED: To form an improved Cu wiring and to improve reliability at a high speed by selectively providing a barrier layer on a substrate in a connection hole and/or a wiring groove and burying Cu or AG conductive material via the barrier layer. SOLUTION: A Ti film 15 and a TiN film 16 are sequentially deposited as a barrier layer selectively on a diffusion layer 7 that is exposed inside a connection hole 13 by the electroless plating method. Then, a Cu film is deposited on the entire substrate surface by the sputtering method, a Cu film 17 for forming wiring is deposited on an entire substrate surface by the electroless plating method with the Cu film as a seed layer, and polishing is made by the CMP method for eliminating unnecessary Cu film 17, thus allowing the Cu film to remain only inside the connection hole 13, thus eliminating a problem where coverage deteriorates at the bottom of the connection hole 13, appropriately burying a wiring groove 12 and the connection hole 13 with the Cu film 17, covering the inner-periphery surface of them with SiN films 14 and 19, and hence preventing the Cu film 17 from being oxidized.
|
