发明名称 |
Process for precoating plasma CVD reactors |
摘要 |
A method for precoating interior surfaces of a plasma CVD reactor after removal of built-up fluorinated silicon oxide residues by in-situ reactor cleaning. The deposition gas mixture includes F, Si, O and optional Ar. The interior surfaces can be precoated with fluorinated silicon oxide using a deposition gas mixture which includes 80 to 200 sccm SiF4 and 150 to 400 sccm O2 supplied to the reactor in a gas flow ratio of O2:SiF4 of 1.4 to 3.2. The precoated film can be deposited at a high deposition rate to maintain high throughput in the reactor while providing a precoat film having low compressive stress and thus high film adhesion and low particle generation during subsequent substrate processing in the reactor.
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申请公布号 |
US6071573(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19970001220 |
申请日期 |
1997.12.30 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KOEMTZOPOULOS, C. ROBERT;KOZAKEVICH, FELIX |
分类号 |
C23C16/44;(IPC1-7):H05H1/24;B05D7/22 |
主分类号 |
C23C16/44 |
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