MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To control the thickness of a polycrystalline silicon film applied to a capacitor lower electrode including a granular silicon part. SOLUTION: This manufacturing method is carried out through a manner where a groove 52 is provided to a silicon oxide film 50, an amorphous silicon film is formed along the inner surface of the groove 52, the surface of the amorphous silicon film is subjected to silicon nucleation and thermally treated to accelerate the growth of grains, and a granular silicon crystal 76 is grown in grains from the amorphous silicon film. Thereafter, a polycrystalline silicon film 77 is formed. Furthermore the polycrystalline silicon film 77 and the granular silicon crystal 76 are removed from the top surface of the silicon oxide film 50 by etch-back, and the electrode of a DRAM(dynamic random access memory) data storage capacitor device is composed of a polycrystalline silicon film 77 and a granular silicon crystal 76.