发明名称 DEVELOPING SOLUTION FOR POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME
摘要 PROBLEM TO BE SOLVED: To enhanc sensitivity and film etching resistance, and to prevent occurrence of scum in a pattern processing stage and to enhanc resolution by using an anionic surfactant and an aqueous alkaline solution containing an extremely small amount of chlorine. SOLUTION: The developing solution for positive photosensitive resin composition to be used contains the anionic surfactant and the aqueous alkaline solution containing an extremely small amount of chlorine, and the preferable anionic surfactant has a structure represented by the formula in which each of R1 and R3 is an H atom or a 7-17C alkyl or alkoxy group and at least one of them is a 7-17C alkyl or a alkoxy group; and each of R2 and R4 is an Na atom or an ammonium group or one selected from primary-quarteryary ammonium groups. A content of the anionic surfactant is 0.1-10 weight % and a concentration of chlorine is 2-200 ppm.
申请公布号 JP2000155428(A) 申请公布日期 2000.06.06
申请号 JP19980332449 申请日期 1998.11.24
申请人 SUMITOMO BAKELITE CO LTD 发明人 MAKABE HIROAKI;BANBA TOSHIO;HIRANO TAKASHI
分类号 G03F7/32;(IPC1-7):G03F7/32 主分类号 G03F7/32
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