发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, where a fine connection is easily made to realize a semiconductor device of high performance. SOLUTION: Adhesive agent 6 is applied on a semiconductor wafer 2 formed of a first semiconductor chip 1 so as not to cover an inner electrode 5 and an outer electrode 4, and a second semiconductor chip 7 is installed facing downward on the first semiconductor chip 1 so as to make inner electrodes 5 and 8 coincident with each other. After the adhesive agent 6 is cured, the semiconductor chip 7 bonded to the semiconductor wafer 2 is dipped into an electroless plating liquid tank 11, and an electroless plating liquid 10 is made to permeate the spacing between the semiconductor chip 7 and the semiconductor wafer 2. The inner electrode 6 of the first semiconductor chip 1 and the inner electrode 8 of the second semiconductor chip 7 are electrically connected together with a deposited metal 12 separated out from the electrode 5 and 8.
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申请公布号 |
JP2000156459(A) |
申请公布日期 |
2000.06.06 |
申请号 |
JP19980330647 |
申请日期 |
1998.11.20 |
申请人 |
MATSUSHITA ELECTRONICS INDUSTRY CORP |
发明人 |
FUJIMOTO HIROAKI;MATSUMURA KAZUHIKO |
分类号 |
H01L25/18;H01L25/065;H01L25/07;(IPC1-7):H01L25/065 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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