SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with high performance and reliability by reducing lattice defects in an active region of a semiconductor element. SOLUTION: This device has lattice defect (a) and comprises a substrate 1 having steps on its surface, an active layer 5 formed on the substrate 1 and consisting of an InGaN quantum well having a low defect region (b) on the steps and a semiconductor element on the substrate 1. An active region 5a of the semiconductor element is formed in the low defect region (b). This active region 5a is preferably formed on a flat part of the active layer consisting of the InGaN quantum well.