SEMICONDUCTOR LASER HAVING ADJUSTABLE GAIN SPECTRUM

摘要

PROBLEM TO BE SOLVED: To obtain a laser diode in which the wavelength can be adjusted through edge irradiation by varying the gain spectrum of active quantum well through electrooptic effect and dispersing charge carriers in a collection quantum well thereby shortening the wavelength switching time. SOLUTION: A P-I-N junction forward bias means injects electrons e from region N and holes t from region P into an active region so that the number of electrons collected by a collection quantum well layer CQW1 close to the region N exceeds the number of electrons collected by an active quantum well layer AQW and a collection quantum well layer CQW2. Furthermore, the number of holes t collected by the collection quantum well layer CQW2 is increased over the number of holes t collected by the collection quantum well layer CQW1 and the gain spectrum of the active quantum well layer AQW is varied thus dispersing charge carriers in each collection quantum well layer CQW1, CQW2.