MAGNETIC ELEMENT, MAGNETIC MEMORY DEVICE, MAGNETIC RESISTANCE EFFECT HEAD, MAGNETIC HEAD GIMBAL ASSEMBLY AND MAGNETIC STORAGE SYSTEM

摘要

PROBLEM TO BE SOLVED: To increase a magneto-resistance change rate, reduce an element resistance and restrict dependency of the magnetic resistance change rate on voltage in a magnetic element having ferromagnetic tunnel bonding. SOLUTION: This magnetic element comprises a laminate film 5 constituted by alternately laminating a mixture layer 3 of a dielectric 7 and a ferromagnetic body 6 with a coercive force that has the same volume as that of the dielectric 7 or a larger volume and dielectric layers 2, 4. In the laminate layer 5, a ferromagnetic layer 1 is disposed adjacent to the mixture layer 3 of the ferromagnetic and dielectric via the dielectric layer 2. The magneto-resistance effect is obtained by providing tunnel current between the mixture layer 3 and the ferromagnetic layer 1 and switching the spin of the one with smaller coercive force of these magnetic layers.