发明名称 Method and apparatus for X-ray topography of single crystal ingot
摘要 PCT No. PCT/JP97/04414 Sec. 371 Date Jul. 28, 1998 Sec. 102(e) Date Jul. 28, 1998 PCT Filed Dec. 3, 1997There is disclosed a method for X-ray topography wherein an X-ray topographic image is obtained for an unprocessed single crystal ingot as it is after being produced by Czochralski method to observe crystal dislocations, thereby finding a boundary between a dislocation-appearing area and a dislocation-disappearing area. A scanning stage (34) travels along a direction X to position the observation area of the silicon ingot (22) at the X-ray irradiation site. The silicon ingot (22) is phi -rotated on its axis so that the predetermined crystal lattice plane erects vertically. A traveling table (46) travels along a direction Y to align the rotation center (49) of an omega -rotation table (48) with the peripheral surface of the ingot (22). The omega -rotation and phi -rotation are precisely adjusted while observing diffracted X-rays with an X-ray television camera (26). Then, an X-ray recording medium (66) is mounted on the scanning stage (34). X-rays from an X-ray source (24) are incident on the peripheral surface of the ingot (22) and the scanning stage (34) is scanned by a given scanning width while recording diffraction images on the X-ray recording medium (66), thereby obtaining an X-ray topographic image and finding a boundary between a dislocation-appearing area and a dislocation-disappearing area.
申请公布号 US6072854(A) 申请公布日期 2000.06.06
申请号 US19980117498 申请日期 1998.07.28
申请人 RIGAKU CORPORATION 发明人 KIKUCHI, TETSUO;MACHITANI, YOSHIO
分类号 C30B15/00;C30B33/00;C30B33/04;G01N23/20;(IPC1-7):G01N23/207;C30B29/06 主分类号 C30B15/00
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