Semiconductor device output buffer circuit for LSI

摘要

In a semiconductor device having a plurality of output circuits such as a semiconductor memory device, a drive signal having a boosted voltage level which is produced from a boosting circuit is applied to a gate of a low-level outputting MOS transistor in the output circuit. As a result, even when a potential at the ground wiring line is floated, a substantial decrease of a potential difference between the ground wiring line and the gate of the low-level outputting MOS transistor can be prevented. Also, a signal having a sufficiently high level can be supplied to a gate of a low-level outputting output MOS transistor. As a consequence, delays in the switching operation of the output MOS transistor can be suppressed, and the output circuit can be operated at high speed.