| 摘要 |
PROBLEM TO BE SOLVED: To extend the elimination effect of hydrogen on void defects to the depths of the wafer without changing the conditions of hydrogen treatment of the wafer and to inhibit clusters from existing in the wafer by pulling up a silicon single crystal while controlling conditions causing oxygen-induced stacking faults(OSF) in the oxidative heat treatment of a wafer formed from the single crystal. SOLUTION: In this production process, a silicon single crystal is pulled up under conditions such that the radius of an OSF ring (ringlike OSF) caused in the oxidative heat treatment of a wafer, is a value falling in the range of from a peripheral region of the wafer, in which OSF begin to be caused, to a circular region having a radius equivalent to a half of the wafer radius, more specifically, under conditions such that V/G is <=0.25 mm2/ deg.C.min (wherein: V is the pulling-up rate (mm/min) of the single crystal being grown; and G is the temperature gradient ( deg.C/mm) within the single crystal in the direction of the crystal axis in the vicinity of the silicon melting point) and the radius of the OSF ring is equal to or larger than a half of the wafer radius. This wafer which is formed from the silicon single crystal thus produced, is subjected to heat treatment using gaseous hydrogen or a non-oxidizing gas to eliminate void defects in the wafer.
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