| 摘要 |
PROBLEM TO BE SOLVED: To simplify a manufacturing method, reduce a performance index as compared with a normal device, and to reduce costs by separating the contact between a source and a channel region from a trench region and using a polysilicon layer common to a plurality of adjacent trenches. SOLUTION: A plurality of rows of trenches 85 with a parallel, identical spread are etched to the surface of a substrate 81 up to the third depth that is deeper than the depth of P diffusion 82. As a result, the parallel trenches 85 are as deep as approximately 1.8 micron and are cut open through a source layer 83 and the channel layer 82. A region that is not trenched at the center of the surface of silicon when no first and second rows of the trench 95 are included is a region where the remote source/channel contact of the device for enabling an extremely narrow, high-density interval of the trench is accommodated. A conductive polysilicon layer 95 that functions as the gate of the device is filled to each inside of the gate oxide that is lined up with the trench. Also, the polysilicon layer 95 is isolated but is continuously extended across the upper surface of the substrate among trenches 85.
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