| 摘要 |
PURPOSE: A method for forming a tunneling oxide film and a method for producing a nonvolatile memory device thereof are provided to improve uniformity by finely adjusting the thickness of the tunneling oxide film and to improve eliminating characteristic by repressing the increase of thickness of the tunneling oxide film caused by the injection of oxygen. CONSTITUTION: A pad oxide film(22) is grown on a semiconductor substrate(21) for forming an impurity layer(23) on the surface of the semiconductor device by thermal oxidizing in the atmosphere of NO or N2O. Then, the pad oxide film is eliminated by a cleaning process, and an oxide film(24) is formed in the interface of the impurity layer and the semiconductor substrate by reacting the oxygen included in the impurity layer to the semiconductor substrate. Herein, the oxide film and the impurity layer are used as a tunneling oxide film(25). And then, a nitride film(26) is deposited on the tunneling oxide film for growing a blocking oxide film(27) on the nitride film by re-oxidization. And, a gate electrode material(26) is deposited on the blocking oxide film for patterning a gate electrode by eliminating the gate electrode material, the blocking oxide film, the nitride film, and the tunneling oxide film. And then, a nonvolatile semiconductor device is completed by forming a source impurity area(29) and a drain impurity area(30).
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