| 摘要 |
PURPOSE: An IGBT(Insulated Gate Bipolar Transistor) module is provided to repress a parasitic vibration without using an additional silicon resistance. CONSTITUTION: An IGBT module has a substrate(200) settled on a hit sink(100), and the substrate is divided into two blocks(A',B') to increase a rated current capacitance. Two IGBT chips(310,320) are aligned in parallel in the block(A'), while aligning two diodes(410,420) in parallel to correspond to each IGBT chip. The diodes form a current channel for the recovering time of the IGBT chips. The anode terminal of the diodes is connected to the emitter terminal of the IGBT chips, and the cathode terminal is connected to the collector terminal of the IGBT chips. Then, a certain part of the substrate is consisted of resistance(510,520) narrowly lengthened in a wrinkle shape for connecting the resistance to the gate terminal of the IGBT chips.
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