发明名称 |
INJECTOR FOR HIGH ENERGY ION FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An ion injector for producing a semiconductor device is provided to prevent the leakage of an arc chamber by preventing the curvature of a filament and by maintaining the balance of the filament. CONSTITUTION: An arc chamber(31) is installed in an ion injector(30) of high energy for supplying process gas to inside. A supporting block(32) is installed in the lower part of the arc chamber for supporting the arc chamber, and a filament is installed in one side of the arc chamber for feeding a uniform voltage to ionize the process gas by emitting thermal electron to the process gas supplied to the inside of the arc chamber. And a supporting unit(40) of filament is installed in the ion injector for preventing the sag of the filament. Herein, the supporting unit of filament includes a filament clamp(41), a supporter(42) of filament, and a filament spring(43). The filament spring maintains the balance of the filament and prevents the filament from being curved by operating restoring force to the filament.
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申请公布号 |
KR20000031239(A) |
申请公布日期 |
2000.06.05 |
申请号 |
KR19980047180 |
申请日期 |
1998.11.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SEONG JU;CHOI, CHAN SEUNG;LEE, SEOK JUN;JANG, CHANG HO |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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