发明名称 INJECTOR FOR HIGH ENERGY ION FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 PURPOSE: An ion injector for producing a semiconductor device is provided to prevent the leakage of an arc chamber by preventing the curvature of a filament and by maintaining the balance of the filament. CONSTITUTION: An arc chamber(31) is installed in an ion injector(30) of high energy for supplying process gas to inside. A supporting block(32) is installed in the lower part of the arc chamber for supporting the arc chamber, and a filament is installed in one side of the arc chamber for feeding a uniform voltage to ionize the process gas by emitting thermal electron to the process gas supplied to the inside of the arc chamber. And a supporting unit(40) of filament is installed in the ion injector for preventing the sag of the filament. Herein, the supporting unit of filament includes a filament clamp(41), a supporter(42) of filament, and a filament spring(43). The filament spring maintains the balance of the filament and prevents the filament from being curved by operating restoring force to the filament.
申请公布号 KR20000031239(A) 申请公布日期 2000.06.05
申请号 KR19980047180 申请日期 1998.11.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SEONG JU;CHOI, CHAN SEUNG;LEE, SEOK JUN;JANG, CHANG HO
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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